Manufacture of semiconductor laser
文献类型：专利
| 作者 | YAMAGUCHI MASAYUKI; ASANO HIDEKI; SHINOHARA YASUO |
| 发表日期 | 1990-04-18 |
| 专利号 | JP1990105489A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To reduce melting back of the sides of an active layer for obtaining the high current-light conversion efficiency having small diffusion loss by filling the sides of a mesa stripe with a current contraction layer having a larger band gap than the active layer by a liquid phase epitaxial growth method while specifying oversaturation of a mixed solution for the current contraction layer to be used for liquid phase epitaxial growth. CONSTITUTION:Two grooves 13 deeper than an active layer and mesa stripe 14 lying between them is formed by etching. Next, excepting the upper part of the mesa stripe 14, a p-InP block layer (current contraction layer) 6, an n-InP block layer 7, then overall a p-InP buried layer 8 and p-InGaAsP cap layer 9 are made to grow by a liquid epitaxial method so that the thickness in the flat part outside the grooves 13 may be 0.5mum, 1mum and 1mum respectively. At this time, a supercool LPE method is applied to the p-InP block layer 6 and oversaturation of a mixed solution shall be 10 deg.C. |
| 公开日期 | 1990-04-18 |
| 申请日期 | 1988-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75638]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI MASAYUKI,ASANO HIDEKI,SHINOHARA YASUO. Manufacture of semiconductor laser. JP1990105489A. 1990-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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