Semiconductor laser
文献类型：专利
| 作者 | IKEDA MASAHIRO |
| 发表日期 | 1991-10-21 |
| 专利号 | JP1991235390A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make possible an oscillation in a stable single mode in a simple periodic structure by a method wherein an active layer is formed into a quantum well structure. CONSTITUTION:An n-type buffer layer 2, an active layer 9 of a quantum well structure and a p-type clad layer 7 are provided in order on an n-type substrate 1 and thereafter, n-type regions 8 are formed periodically on the layer 7 and moreover, a p-type clad layer 5 and a p cap layer 6 are formed. By this constitution, when a forward current is made to flow, an injection current flows periodically. Since the layer 9 has the quantum well structure, the gain coefficient of the layer 9 is high. Moreover, an oscillation in a stable single mode becomes possible by setting a Bragg wavelength of a periodic structure on the side of a wavelength longer than an absorption edge wavelength of the layer 9. |
| 公开日期 | 1991-10-21 |
| 申请日期 | 1990-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75644]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | IKEDA MASAHIRO. Semiconductor laser. JP1991235390A. 1991-10-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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