Semiconductor laser
文献类型：专利
| 作者 | MITSUI, SHIGERU; HATTORI, RYO |
| 发表日期 | 1991-03-26 |
| 专利号 | US5003549 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser particularly adapted for operation in the self-pulsation mode and method for production thereof. A central mesa is formed in the upper cladding layer and normally requires relatively thick sections at either side of the mesa in order to form a waveguide of sufficient thickness to cause self-pulsation operation. In order to control the thickness of the upper cladding layer bounding the mesa, the mesa is first formed by etching the regions bounding the mesa to relatively thin sections capable of ready gauging by optical interferometry. A composite upper cladding layer is then formed by utilizing MOCVD crystal growth techniques to form a buffer layer on the upper cladding layer bounding the mesa, the buffer layer having an aluminum content about the same as the aluminum content of the AlGaAs upper cladding layer. The composite layer functions as a comparatively thick waveguide which can be formed to the necessary thickness with adequate accuracy to provide a high yield when producing self-pulsation lasers according to the present invention. |
| 公开日期 | 1991-03-26 |
| 申请日期 | 1989-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75646]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MITSUI, SHIGERU,HATTORI, RYO. Semiconductor laser. US5003549. 1991-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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