Manufacture of semiconductor light-emitting element
文献类型：专利
| 作者 | IMANAKA KOUICHI; KAMIJIYOU TAKESHI |
| 发表日期 | 1985-10-31 |
| 专利号 | JP1985217689A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To prevent the formation of a current leakage path on the injection of high currents, and to operate the titled element at a high output by etching a groove in depth reaching to a substrate to a high resistance layer and growing a first clad layer, an active layer and a second clad layer in succession through an organic metal vapor phase epitaxial growth method. CONSTITUTION:A semi-insulating AlxGa1-xAs layer 12 as a high resistance layer is grown on the whole surface of the upper surface 11a of a substrate 11 through an organic metal vapor phase epitaxial growth method. The layer 12 is etched where related to a laser oscillation, and a groove 13 in depth reaching to the substrate 11 is formed. The exposed surface 11c of the substrate 11 appears by the formation of the groove 13, and the residual layer 12 functions as a current constriction layer. A P-InP first clad layer 14, a GaInAsP active layer 15 and an n-InP second clad layer 16 are each crystal-grown continuously in succession. Proer conditions are set as required as the conditions of the organic metal vapor phase epitaxial growth. Since the energy gap of the current constriction layer 12 is made larger than those of the substrate 11 holding the layer 12 and the first clad layer 14, the increase of the leakage currents of a current leakage path is prevented. |
| 公开日期 | 1985-10-31 |
| 申请日期 | 1984-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75653]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI,KAMIJIYOU TAKESHI. Manufacture of semiconductor light-emitting element. JP1985217689A. 1985-10-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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