Semiconductor laser device
文献类型：专利
| 作者 | YOSHITOSHI KEIICHI |
| 发表日期 | 1986-12-20 |
| 专利号 | JP1986290791A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminate the dispersion of the speed of crystal growth, and to control the formation of a double hetero-layer precisely by forming grooves while being rectilinearly arranged on the upper surface of a substrate, shaping a base between the opposite end sections of both grooves and laminating and forming the double hetero-layer on the substrate containing the grooves and the base. CONSTITUTION:Inverted trapezoid grooves 1a, 1b reaching a substrate 1 are shaped rectilinearly under the state in which a mesa base 1c is formed between the opposite ends of the grooves 1a, 1b. A clad layer 3 constituting a double hetero-layer, an active layer 4, a clad layer 5, a cap layer 6 and an N-type electrode 7 are crystal-grown on a current blocking layer 2 containing the mesa base 1c and the grooves 1a, 1b and the substrate 1 in succession. Accordingly, the speed of crystal growth to the peripheral section of the mesa base 1c is made remarkably lower than that to a recessed section in a conventional device, thus controlling film thickness comparatively easily. |
| 公开日期 | 1986-12-20 |
| 申请日期 | 1985-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHITOSHI KEIICHI. Semiconductor laser device. JP1986290791A. 1986-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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