Semiconductor laser device
文献类型：专利
| 作者 | OOTOSHI SOU; KOUNO TOSHIHIRO; KAJIWARA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU |
| 发表日期 | 1984-08-21 |
| 专利号 | JP1984145590A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a device, temperature characteristics thereof are improved, an output therefrom is increased and a lateral mode thereof at a high output is stabilized, by making the refractive indices of a P type clad and an N type clad asymmetric, bringing the conduction type of a light guide layer to an N type while bringing an active layer to a quantum well type and making an end surface transparent. CONSTITUTION:A clad layer 2, a light guide layer 3, an active layer 4, a clad layer 5 and a cap layer 6 are grown on a substrate 1 in succession through a liquid phase epitaxial growth method. A mesa stripe is formed through etching. In this case, the depth of a mesa is made reach to the substrate 1, and the width of the light guide layer is made larger than that of the active layer in the direction rectangular to the stripe. Only Ga0.55Al0.45As in the P clad layer 5 is etched by 1-3mum from both sides. The active layer exposed to the side surface of the stripe is removed to form a predetermined section. The mesa stripe is buried with a P-Ga0.55Al0.45As layer 7 and an N-Ga0.55Al0.45As layer 8 through a liquid phase epitaxial growth method and Zn is diffused 9 selectively, and ohmic electrodes 10, 11 are formed. A visible semiconductor laser of a fundamental lateral mode up to an oscillation wavelength of 0.78mum and an optical output of 30-50mW and a maximum optical output of 1W was obtained as a device, an end surface thereof is made transparent in our experiment. |
| 公开日期 | 1984-08-21 |
| 申请日期 | 1983-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOTOSHI SOU,KOUNO TOSHIHIRO,KAJIWARA TAKASHI,et al. Semiconductor laser device. JP1984145590A. 1984-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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