Semiconductor laser
文献类型：专利
| 作者 | MIURA SHUICHI; KIHARA KATSUHIRO |
| 发表日期 | 1991-10-15 |
| 专利号 | JP1991231485A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To concentrate an electric current in an active layer and to reduce a threshold current by a method wherein the impurity concentration of a semiconductor layer constituting a buried layer is made smaller than or identical to that of a first clad layer. CONSTITUTION:The impurity concentration of a semiconductor layer 6 constituting a first layer for a buried layer 5 is made smaller than or identical to the impurity concentration of a first clad layer 2. As a result, the resistance component in the semiconductor layer 6 of the first layer for the buried layer 5 is identical to or larger than the resistance component of the first clad layer 2, and a leakage current which is passed through the buried layer 5 is reduced. Consequently, an injected electric current can be concentrated in an active layer 3, a threshold current is reduced and a temperature characteristic can be enhanced. |
| 公开日期 | 1991-10-15 |
| 申请日期 | 1990-02-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75668]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MIURA SHUICHI,KIHARA KATSUHIRO. Semiconductor laser. JP1991231485A. 1991-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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