Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | ARIMOTO SATOSHI; YOSHIDA NAOTO |
| 发表日期 | 1992-05-01 |
| 专利号 | JP1992130692A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve regrown boundary characteristics between a first upper clad layer and a block layer by forming a structure in which a GaInP etching stopper layer of a region except the ridge on an AlGaInP first upper clad layer provided on an active layer is removed. CONSTITUTION:A wafer formed in a shape in Figure b is processed as prescribed in a growing furnace to remove only a GaInP thin film layer 5b except a ridge 10a by thermally decomposing, and the surface of a first upper clad layer 4a is present. Then, an n-type GaAs current block layer 8a is continuously grown in the same furnace. Since the regrown boundary of the layer 4a and the layer 8a formed in this manner is not exposed with the atmosphere before crystal growing, excellent regrown boundary characteristics are obtained. In addition, since a P-type GaInP thin film layer 5a is not to the layer 8a, lateral extension of a current is eliminated to improve a current blocking effect. |
| 公开日期 | 1992-05-01 |
| 申请日期 | 1990-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ARIMOTO SATOSHI,YOSHIDA NAOTO. Semiconductor laser and manufacture thereof. JP1992130692A. 1992-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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