Semiconductor laser
文献类型：专利
| 作者 | SUGOU, SHIGEO |
| 发表日期 | 1988-12-13 |
| 专利号 | US4791647 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | An improved semiconductor laser comprises the first and second cladding portions respectively formed on a semi-insulating substrate, an active region sandwiched between the first and second cladding portions, and the first and second electrodes respectively provided on the first and second cladding portions. The first cladding portion includes a semiconductor layer and semi-insulating semiconductor layers provided on the top and back sides of the semiconductor layer so that carries are injected into an active region which is in contact with the side wall of the semiconductor layer, while current leakage is prevented from being produced because the carrier are not injected into other portion than the active region. An improved process of the fabrication of a semiconductor laser comprises forming the first cladding portion to have a vertical side wall from which a side wall of a semiconductor layer is exposed so that an active region is easily formed to be in contact with the side wall of the semiconductor layer. |
| 公开日期 | 1988-12-13 |
| 申请日期 | 1987-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75676]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | SUGOU, SHIGEO. Semiconductor laser. US4791647. 1988-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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