Manufacture of semiconductor laser
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; FUKUDA HIROKAZU; EBE KOUJI |
| 发表日期 | 1985-07-25 |
| 专利号 | JP1985140888A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To keep the polarity of a protection layer stable by inhibiting the evaporation of Bi doped in an active protection layer by a method wherein the surface of a burial crystal substrate is coated with an vapor containing Bi in case of growing a buried layer on the substrate. CONSTITUTION:The burial crystal substrate 1 is set up in a carbon boat 1 A boat slider 12 is provided with a chamber 13, which is then filled with the vapor of Bi or a Bi-containing substance. For this purpose, a shelf 14 is formed in the chamber 13, and Bi or Bi-containing substance 15 is placed thereon. With an increase in temperature in the chamber 13, the vapor containing Bi is evaporated. A cap 16 is put over the chamber so that this vapor does not escape, and this situation is kept to immediately before the growth of a burial layer. |
| 公开日期 | 1985-07-25 |
| 申请日期 | 1983-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75682]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,FUKUDA HIROKAZU,EBE KOUJI. Manufacture of semiconductor laser. JP1985140888A. 1985-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。