Manufacture of semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI MASAO; MATOBA AKIHIRO; TSUBOTA TAKASHI |
| 发表日期 | 1991-12-13 |
| 专利号 | JP1991283689A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form a block layer free from an abnormal protrusion or recess by forming a thin semi-insulating compound semiconductor layer and forming a flattened layer on it when a DH structure is buried by the semi-insulating compound semiconductor layer. CONSTITUTION:A lower clad layer 53, an undoped active layer 55, an upper clad layer 57 and a contact layer 59 are sequentially formed on a substrate 5 Then a stripe etching mask 61 is formed on the layer 59. Then a part ex posed from the mask 61 is etched to form a DH structure 63. A semi-insulating InP layer 65 of Fe-dope is grown on a specimen. Thickness of the InP layer 65 is desirably within a range of 0.1 to 0.5mum. Then a flattened layer 67 having insulating property is formed on the layer 65. |
| 公开日期 | 1991-12-13 |
| 申请日期 | 1990-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75684]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAO,MATOBA AKIHIRO,TSUBOTA TAKASHI. Manufacture of semiconductor laser. JP1991283689A. 1991-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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