Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | ASATA SUSUMU |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989292878A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce leakage current and simplify production process by selectively growing an n-type semiconductor clad layer, an active layer, a p-type semiconductor clad layer at the inside of groove only so that the upper edge of groove becomes flat and by growing the p-type semiconductor clad layer over the entire surface finally. CONSTITUTION:The upper and lower sides of either of an active area and a semi- insulation current rejection layer provided at both left and right of the active area are enclosed by the p-type semiconductor clad layer and n-type semiconductor clad layer, respectively. Also, an n-type semiconductor layer is inserted being adjacent to the p-type semiconductor clad layer on the upper surface of the semi-insulation current rejection phase. For example, an n-type InP substrate 10 consists of a semi- insulation InP current rejection layer 11, an n type InP clad layer 12, an InGaAsP active layer 13, a p-type InP clad layer 14, and an n-type InP stopper layer 15 and the n-type InP stopper layer 15 directly contacts a p-type InP clad layer 14. In this case, a layer consisting of InGaAsP composition is not provided on the semi-insulation InP current rejection layer 11 to reduce current leakage. Thus, a semiconductor laser with a low threshold current and with high-efficiency oscillation suiting for light source elements for optic communication and optic information processing can be realized. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75692]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU. Semiconductor laser and manufacture thereof. JP1989292878A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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