Semiconductor laser
文献类型：专利
| 作者 | SHIMA KATSUTO; OOSAKA SHIGEO; SEKI KATSUJI; HANAMITSU KIYOSHI |
| 发表日期 | 1983-05-02 |
| 专利号 | JP1983073181A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make an etching process for formation of electrode needless at a refractive index differentiating waveguide type semiconductor laser by a method wherein a p side electrode and an n side electrode are formed being separated respectively on the upper and lower faces of a substrate. CONSTITUTION:An n type clad layer 10 and a p type clad layer 13 are arranged holding an active layer 12 to oscillate laser rays and provided on a substrate 9 from the upper and lower sides. Moreover impurity regions 15 to control the lateral mode of laser oscillation are provided at the outsides of the laser oscillating region. Moreover a p side electrode 16 is arranged on the p type clad layer 13 side, and an n side electrode 17 is arranged on the substrate 9 side. Because the p side electrode 16 and the n side electrode 17 are formed being divided into the upper and lower faces of the substrate 9 respectively like this, the etching process for formation of electrode can be made needless. |
| 公开日期 | 1983-05-02 |
| 申请日期 | 1981-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75694]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO,OOSAKA SHIGEO,SEKI KATSUJI,et al. Semiconductor laser. JP1983073181A. 1983-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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