Semiconductor laser
文献类型：专利
| 作者 | TANAKA HIDENAO; ASAHI HAJIME |
| 发表日期 | 1987-02-02 |
| 专利号 | JP1987024681A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the thermal resistance of a clad layer without deteriorating the light confinement and improve heat radiation to unnecessitate forced cooling and obtain an InGaAlP semiconductor laser facilitating continuous oscillation of a low current at the room temperature by specifying the thickness of an InGaAlP activation layer and the thickness of the InGaAlP clad layer of the heat sink side. CONSTITUTION:The thickness of an InGaAlP activation layer 13 is selected to be 0.1-0.3mum and the thickness of an InGaAlP clad layer 12 of the heat sink 19 side is selected to be 0.8-0.3mum. For instance, after the N-type In0.49 Ga0.31Al0.20P clad layer 12, the In0.49Ga0.51P activation layer 13, a P-type In0.49 Ga0.31Al0.20P clad layer 14 and a P-type GaAs cap layer 15 are successively formed to the thicknesses of 0.5mum, 0.2mum, 0.5mum and 1mum respectively on an N-type GaAs substrate 11 by a molecular beam epitaxial method, an SiO2 film 16, a P-type electrode 17 and an electrode 18 are formed and then an SiO2 stripe laser with a stripe width of 5mum and a resonator length of 200mum is obtained by cleaving and mounted on the heat sink 19. |
| 公开日期 | 1987-02-02 |
| 申请日期 | 1985-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75700]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | TANAKA HIDENAO,ASAHI HAJIME. Semiconductor laser. JP1987024681A. 1987-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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