Semiconductor laser device
文献类型：专利
| 作者 | KURODA TAKAROU; KAJIMURA TAKASHI; KASHIWADA YASUTOSHI; KAYANE NAOKI; OOUCHI HIROBUMI |
| 发表日期 | 1984-06-09 |
| 专利号 | JP1984100583A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain an element with good reproducibility by one crystal growth, by forming a pattern on a substrate crystal surface in a phased array laser by lithography. CONSTITUTION:Convex type stripes 2 having interconnecting parts 3 are formed on the surface of a substrate crystal for laser. When the laser having an ordinary double heterostructure is grown on the substrate by using said substrate, the shape of the convex parts is copied to an active layer 3 When clad layers 21 and 41 are grown, the crystal surface after the growth of a gap layer 51 becomes flat. When Zn diffused electrode regions 61, which excite the stripe regions 2, are provided, the laser light is guided by the effective refractive index difference caused by the steps in the active layer 3 The phases of the laser light beams in all the stripes are synchronized through the interconnecting parts 3. |
| 公开日期 | 1984-06-09 |
| 申请日期 | 1982-12-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75702]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KURODA TAKAROU,KAJIMURA TAKASHI,KASHIWADA YASUTOSHI,et al. Semiconductor laser device. JP1984100583A. 1984-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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