Semiconductor laser
文献类型：专利
| 作者 | MURAKAMI TAKASHI; SUZAKI WATARU |
| 发表日期 | 1987-01-31 |
| 专利号 | JP1987023193A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser capable of easy electrical separation from the other elements at the time of integration and of lateral mode control, by forming a lower clad layer, an active layer, and an upper clad layer on a substrate in the groove region in the above order and making the refractive index of the active layer larger than those of the lower clad layer, the upper clad layer, and the first and second confinement layers. CONSTITUTION:A groove 8a is formed between a p-type AlzGa1-zAs confinement layer 9a, a P-type GaAs contact layer 5a and an N-type AlzGa1-zAs confinement layer 9b, an N-type GaAs contact layer 5b. In the groove 8a, an N-type AlxGa1-zAs lower clad layer 2a, an N-type AlyGa1-yAs active layer 3a, an N-type AlxGa1-xAs upper clad layer 4a are formed on a semi-insulating layer GaAs substrate 1a in the above order. In this case, the refractive index of the active layer 3a is larger than those of the lower clad layer 2a, the upper clad layer 4a, and the first and second confinement layers 9a and 9b. |
| 公开日期 | 1987-01-31 |
| 申请日期 | 1985-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75706]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MURAKAMI TAKASHI,SUZAKI WATARU. Semiconductor laser. JP1987023193A. 1987-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。