Semiconductor laser device
文献类型：专利
| 作者 | SHIGIHARA, KIMIO |
| 发表日期 | 2008-08-19 |
| 专利号 | US7415054 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes first and second conductivity type cladding layer side guide layers disposed in direct contact with respective surfaces of an active layer, sandwiching the active layer; and first and second conductivity type cladding layers disposed in direct contact with the first and second conductivity type cladding layer side guide layer, respectively. The first and second conductivity type cladding layer side guide layers are InGaAsP which is lattice-matched to GaAs and have an As composition ratio more than 0 and not exceeding 0.3. The first and second conductivity type cladding layers are AlGaAs, having an Al composition ratio less than 0 and at least equal to an Al composition ratio at which refractive index of the AlGaAs is less than the refractive index of the InGaAsP. |
| 公开日期 | 2008-08-19 |
| 申请日期 | 2007-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIGIHARA, KIMIO. Semiconductor laser device. US7415054. 2008-08-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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