Semiconductor laser device
文献类型：专利
| 作者 | OISHI AKIO; KAJIMURA TAKASHI |
| 发表日期 | 1989-06-30 |
| 专利号 | JP1989166586A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce returning light to the inside of a semiconductor laser and noises caused thereby by applying a reflection coating of a specified reflection factor to the front of a laser and a reflection coating of a reflection factor higher than that of the front to the rear. CONSTITUTION:Coating of two layers and four layer of SiO2, amorphous Si is applied to the front of a laser chip 1 of pulsation semiconductor laser as a front reflection film 2, controlling the reflection factor to be 40-70%. Similarly, coating of SiO2, amorphous Si four layer is applied to the rear of the chip 1 to form a rear reflection film 3 making the reflection factor of 90% higher than the front reflection factor. In this way, returning light into the chip 1 and noises caused thereby are reduced. |
| 公开日期 | 1989-06-30 |
| 申请日期 | 1987-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75724]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OISHI AKIO,KAJIMURA TAKASHI. Semiconductor laser device. JP1989166586A. 1989-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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