Semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI |
| 发表日期 | 1989-10-19 |
| 专利号 | JP1989262689A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the edge breakdown level of a laser resonator by a wherein the composition of a third clad layer at the edge face of the laser resonator is made different from those of other regions to make small the optical confinement coefficient of an active layer on the edge face of the resonator and the optical confinement coefficient of the active layer in the interior of the resonator is made larger. CONSTITUTION:The interior of a laser resonator consists of an N-type GaAs substrate 1, an N-type Al0.55Ga0.45As first clad layer 2, an Al0.15Ga0.85As active layer 3, a P-type Al0.45Ga0.55As second clad layer 4, a P-type Al0.5Ga0.5As third clad layer 5, a P-type GaAs layer 6, an N-type GaAs photo absorption layer 14, a Zn diffused layer 9, a P-type electrode 10 and an N-type electrode 1 Moreover, the vicinity of the edge face of the laser resonator has the same structure as the above one, but the composition of the layer 5 is changed, the optical confinement coefficient GAMMA of the layer 3 on the edge face of the resonator is made small and the GAMMA of the layer 3 in the interior of the resonator is made large. |
| 公开日期 | 1989-10-19 |
| 申请日期 | 1988-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75732]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI. Semiconductor laser. JP1989262689A. 1989-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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