Distributed reflection semiconductor laser
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; KASHIWA SUSUMU |
| 发表日期 | 1988-04-04 |
| 专利号 | JP1988073684A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser |
| 英文摘要 | PURPOSE:To be able to manufacture a distributed reflection type semiconductor laser by twice crystal growth and to reduce a leakage current to an optical guide layer by providing a second conductivity type optical guide layer which is used also as a current blocking layer having smaller refractive index than an active layer and a striped channel, an active layer directly coupled with the optical guide layer, and a second conductivity type clad layer covered on the active layer and the guide layer. CONSTITUTION:A current blocking layer and optical guide layer 13 made of an n-type GaInAsP (lambdag=3mum) formed by a first crystal growth is provided on a semiconductor substrate 1 A striped groove 14 opened to expose the flat part of the main surface of the substrate 11 is formed on the layer 13. A buffer layer 15 made of a p-type InP and an active layer 16 made of GaInAsP (lambdag=55mum) are sequentially laminated on the flat main surface of the substrate 11 and the layer 13 exposed by the groove 14. A clad layer 17 made of an n-type InP and a cap layer 18 made of an n-type GaInAsP (lambdag=3mum) are sequentially laminated on the layer 16. |
| 公开日期 | 1988-04-04 |
| 申请日期 | 1986-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75742]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,KASHIWA SUSUMU. Distributed reflection semiconductor laser. JP1988073684A. 1988-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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