Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MURAKAMI TAKASHI; KONNO NOBUAKI |
| 发表日期 | 1991-05-01 |
| 专利号 | JP1991104183A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To set the band-gap energy on the side of GaAs lower than that on the side of AlGaLnP and hence lower operating voltage by providing a P-GaInP buffer layer between a P-GaAs contact layer and a P-AlGaInP cladding layer. CONSTITUTION:There are provided on an n-GaAs substrate 1 an n-Al0.25Ga0.25 In0.5P cladding 2, a non-doped Ga0.5In0.5P active layer 3, a p-Al0.25Ga0.25P cladding 4, an n-GaAs current blocking layer 5, a p-Ga0.5In0.5P buffer 6, a low temperature grown p-Ga0.5In0.4P buffer 7, a p-GaAs contact 8, a bridge 9, and n, p side electrodes 10, 1 With the growth temperature of the layers 1-6 being 650 deg.C and with a V/III group ratio being 400, the low temperature grown buffer 7 is grown with its temperature being changed gradually a range of 650 deg.C-600 deg.C. For film thickness, the layer 6 is of 0.05mum and the low temperature grown buffer 7 is of about 0.05 mum. With such configuration, bands of the layers 4, 6, 7, and 8 are gradually changed and hereby potential barriers on the side of valence electron bands are moderated. Thus, low voltage operation is assured. Provided growth temperature on the side in contact with GaAs is set lower than that on the side of an AlGaInP side, a low resistance ratio is achieved. |
| 公开日期 | 1991-05-01 |
| 申请日期 | 1989-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75748]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MURAKAMI TAKASHI,KONNO NOBUAKI. Semiconductor laser and manufacture thereof. JP1991104183A. 1991-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。