Manufacture of semiconductor device
文献类型：专利
| 作者 | TANAKA TOSHIO |
| 发表日期 | 1990-01-25 |
| 专利号 | JP1990023688A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To make a self-oxide film of an N-type GaAs contact layer work as a buffer layer of stress due to a difference in thermal expansion coefficient of the N-type GaAs contact layer and a nitride film by interposing the self-oxide film between the N-type GaAs contact layer and a nitride film as a diffusion mask. CONSTITUTION:A GaAs self-oxide film 11 is formed on a surface of TJS-LD epitaxial growth layer from hundreds of Angstrom to thousands of Angstrom . A nitride film (SIN) 9 is formed in stripes as a diffusion mask. Then Zn 10 is diffused using the nitride film 9 as a mask until it reaches the GaAs substrate 1 to form a P-type layer 6. The nitride film 9 is eliminated entirely, and a P-electrode 8 and an N-electrode 7 are formed on the side of the P-type layer 6 and the N side, respectively. A P-N junction of an N-type GaAs contact layer 5 is eliminated and cleaved to form a chip of a laser diode. Since the self-oxide film 11 of GaAs is composed of the same elements as an N-type GaAs contact layer 5 between the layer 5 and the nitride film 9, a stress to the N-type GaAs contact layer 5 is reduced. |
| 公开日期 | 1990-01-25 |
| 申请日期 | 1988-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75756]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO. Manufacture of semiconductor device. JP1990023688A. 1990-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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