Manufacture of semiconductor wafer
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI; NAMISAKI HIROBUMI; HIRANO RIYOUICHI; SUZAKI WATARU |
| 发表日期 | 1983-03-25 |
| 专利号 | JP1983050791A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor wafer |
| 英文摘要 | PURPOSE:To obtain the wafer for a semiconductor element in an even desired thickness without internal strains and enable to extremely easily perform an etching without the need of the control of the etching time, by forming a semiconductor thin layer of a different etchant on a semiconductor substrate and forming a support semiconductor layer and a semiconductor layer thereon, and thereafter etching-removing all the first semiconductor substrate. CONSTITUTION:It is constituted of an InP substrate 1, multi-layer epitaxial growing layer 2 having the double hetero structure normally of an InP and an InGaAsP and a contact layer, a thin InGaAsP layer 3 which is epitaxially grown on the InP substrate 1 and a thick InP layer 4 which is epitaxially grown on this InGaAsP layer 3 and to be an element support semiconductor layer, and the multi-layer epitaxial growing layer 2 is grown on the InP layer 3. When the InP substrate 1 is etched by hydrochloric acid, the etching stops in a state of the etching removal of all the InP substrate Next, when the InGaAsP layer 3 is etching-removed by an etchant of sulfuric acids, the semiconductor wafer constituted of the desired InP layer 3 and multi-layer epitaxial growing layer 2 can be obtained. |
| 公开日期 | 1983-03-25 |
| 申请日期 | 1981-09-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75760]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI,NAMISAKI HIROBUMI,HIRANO RIYOUICHI,et al. Manufacture of semiconductor wafer. JP1983050791A. 1983-03-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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