Semiconductor laser device
文献类型：专利
| 作者 | NANBARA SEIJI; KIMURA HIDE |
| 发表日期 | 1991-02-01 |
| 专利号 | JP1991024785A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to suppress damage, which is inflicted on an AlGaAs active layer at the time of a die bonding, by a method wherein a con tact layer is formed into a two layer structure, which consists of a first contact layer of a carrier concentration of 10 and a second contact layer of a carrier concentration of 10, and these first and second contact layers are grown by an LPE method. CONSTITUTION:A first contact layer 6 is formed by a liquid phase epitaxial growth LPE method and the roughnesses, such as rises or the like at the end parts of a first conductivity type current stopping layer 5, of a crystal face are flattened. Moreover, a carrier concentration in the layer 6 is set into 10 or thereabouts, a P-type dopant is restrained from being subjected to solid phase diffusion, a carrier concentration in a second contact layer 7 is set into 10 or thereabouts and the ohmic contact of a contact layer consisting of the first and second contact layers 6 and 7 with a P-type electrode 8 can be obtained. Thereby, damage, which is inflicted on a P-type AlGaAs active layer at the time of a die bonding, can be suppressed. |
| 公开日期 | 1991-02-01 |
| 申请日期 | 1989-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NANBARA SEIJI,KIMURA HIDE. Semiconductor laser device. JP1991024785A. 1991-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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