Manufacture of semiconductor laser
文献类型：专利
| 作者 | OKADA TSUNEO; KIMURA HIDE |
| 发表日期 | 1991-08-15 |
| 专利号 | JP1991187282A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser where the dispersion of the images in horizontal far view is small by putting the shoulder of a stripe-shaped trench in smooth shape by etching after forming the stripe-shaped trenched but before performing epitaxial growth. CONSTITUTION:The first N-GaAs current block layer 2 is crystal-growth on a P-GaAs substrate 1, and then a stripe consisting of a V-shaped trench is made. When this is etched 20 seconds using 4% Br-methyl solution, the shoulder 7 of the V trench is formed in smooth shape. And at the second growth of a P-AlGaAs clad layer 3, by raising the saturation temperature of Ga melt to about 15 deg.C, the amount of meltback is decreased. Hereby, even if large area is crystal-grown at a time, the dispersion of the images in horizontal far view of light can be decreased. |
| 公开日期 | 1991-08-15 |
| 申请日期 | 1989-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75770]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OKADA TSUNEO,KIMURA HIDE. Manufacture of semiconductor laser. JP1991187282A. 1991-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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