Semiconductor laser and method of manufacturing same
文献类型：专利
| 作者 | UENO, YOSHIYASU C/O NEC CORPORATION; CHIDA, HIROAKI C/O NEC CORPORATION |
| 发表日期 | 1999-06-23 |
| 专利号 | EP0924819A2 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and method of manufacturing same |
| 英文摘要 | A semiconductor laser capable of producing a high optical output has a coating film applied to an exit end. The coating film has a refractive index (n1) which is large compared with the refractive index (neff) of a semiconductor waveguide. The refractive index (n1) and the refractive index (neff) satisfy the relationship: n12 > neff. |
| 公开日期 | 1999-06-23 |
| 申请日期 | 1998-12-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75772]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | UENO, YOSHIYASU C/O NEC CORPORATION,CHIDA, HIROAKI C/O NEC CORPORATION. Semiconductor laser and method of manufacturing same. EP0924819A2. 1999-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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