Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | MIHASHI YUTAKA; KAKIMOTO SHIYOUICHI; HIRONAKA MISAO; TAKAMIYA SABUROU |
| 发表日期 | 1984-08-25 |
| 专利号 | JP1984149079A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a long-life high-reliability laser element, which can bring stripe width, in which currents in an active layer flow concentrically, to predetermined narrow width, by forming a striped trapezoid projecting section to the main surface section of a first conduction type semiconductor substrate and forming a second conduction type current constriction layer with the exception of the upper surface of the trapezoid projection section. CONSTITUTION:An n type GaAs current constriction layer (a second conduction type current constriction layer) 11 is formed with the exception of the upper surface of a trapezoid projecting section 10a on a p type GaAs substrate (a first conduction type semiconductor substrate) 10, and a p type AlxGa1-xAs clad layer 4, a p type AlyGa1-y As active layer 3, an n type AlGa1-xAs clad layer 2 and an n type GaAs layer 5 are formed on the layer 1 The width of the upper surface of the trapezoid projecting section 10a can be realized easily to not more than 2mum width with excellent reproducbility, and all of currents crossing the semiconductor substrate 1 concentrically pass and flow through only a section corresponding to the upper surface of the trapezoid projecting section 10a of the p type AlGaAs active layer 3, thus eliminating a possiblity that a crystal defect is generated in the active layer, then relaizing a long-life high-reliability laser element. |
| 公开日期 | 1984-08-25 |
| 申请日期 | 1983-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75782]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA,KAKIMOTO SHIYOUICHI,HIRONAKA MISAO,et al. Semiconductor laser element and manufacture thereof. JP1984149079A. 1984-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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