Semiconductor light emitting device
文献类型：专利
| 作者 | HIGUCHI HIDEYO; NAGAI SEIICHI; OOMURA ETSUJI |
| 发表日期 | 1985-01-25 |
| 专利号 | JP1985014489A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To stably realize the virtual reflection factor by a method wherein a first film, whose film thickness is lambda/4 of the oscillation wavelength and refractive index is n1, is adhered on one end surface of the resonator mirror of a luminescent element and a second film, whose film thickness is lambda/4 as well and refractive index is n2 smaller than the n1, is adhered thereon. CONSTITUTION:This semiconductor luminescent device has been so constituted that non- reflected films 3 and 4 of two layers, whose film thicknesses t3 and t4 are respectively lambda/4 of the oscillation wavelength, are coated by an electron beam evaporation instead if conventional non-reflected films and the relation between the refractive indexes n3 and n4 of the non-reflected films 3 and 4 is n3>n4. The edge-reflection factor R becomes the minimal value when the film thicknesses t3 and t4 are lambda/4. According to this device constituted in such a way, when the non-reflected films 3 and 4 of n3=3.2 and n4=45 are used for lambda-8,000Angstrom , the edge-reflection factor R becomes R=2.2% and an almost same edge-reflection factor as in the case of a non-reflected film 2 of one layer, whose film thickness is lambda/4 of the oscillation wavelength, made of an Al2O3 can be realized, thereby enabling to improve remarkably the noise characteristics in case there is a return light. The film of n3=3.2 and the film of n4=45 can be realized by successively coating an alpha-Si (amorphous silicon) and an SiO2 according to an electron beam evaporation. |
| 公开日期 | 1985-01-25 |
| 申请日期 | 1983-07-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75786]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HIGUCHI HIDEYO,NAGAI SEIICHI,OOMURA ETSUJI. Semiconductor light emitting device. JP1985014489A. 1985-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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