Semiconductor laser device
文献类型：专利
| 作者 | KURODA TAKAROU; KAJIMURA TAKASHI; UMEDA JIYUNICHI |
| 发表日期 | 1985-01-28 |
| 专利号 | JP1985016489A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive to increase the output by the radiation of a laser beam of uniform basic lateral modes by a method wherein a reflection plane corresponding to an active layer is provided with a photo absorption film with a hole of the shape of said mode bored. CONSTITUTION:A clad layer 12, the active layer 13, and a clad layer 14 of required thicknesses are epitaxially grown on a crystal substrate 11 successively. Next, a stripe conductive region 16 is formed in the clad layer 14 by means of a mask of a required width. A passivation film SiO2 1 is adhered to the end surface of a stripe structure planar type semiconductor laser thus formed. This element is incorporated in a sub mount system, and then a resist material 2 corresponding to photo distribution is formed by the heat at the end surface under laser generation. Thus, the part of the material 2 is changed into the photo absorption film of the hole of the shape of the mode. Then, the semiconductor laser is increased in the output by the radiation of the laser beam of uniform basic lateral modes. |
| 公开日期 | 1985-01-28 |
| 申请日期 | 1984-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75792]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KURODA TAKAROU,KAJIMURA TAKASHI,UMEDA JIYUNICHI. Semiconductor laser device. JP1985016489A. 1985-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。