Semiconductor laser device
文献类型：专利
| 作者 | OTAKI KANAME |
| 发表日期 | 1988-03-18 |
| 专利号 | JP1988062291A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To operate a semiconductor laser at a high output with a low threshold value current by forming a ridge on the end face of a resonator, a substrate having a groove on the same plane as the upper surface of the ridge in the bottom therein, a block layer on the substrate, a clad layer and a thick active layer on the groove thinly on the ridge formed without step thereon, a clad layer formed thereon, and a contact layer. CONSTITUTION:The widths of the ridge 11 and groove 12 of a substrate 10 are set 20mum, a block layer 6 is formed, and a current constriction groove 9 is then formed. When a clad layer 2 is grown on the layer 6 at a small cooling velocity, the groove is formed with a smooth opening angle. Then, when active layers 3a, 3b are grown, the growth is accelerated at the V-shaped groove, and the layer 3b is increased in its thickness, and the layer 3a is decreased at the end of the resonator. Thereafter, a clad layer 4 and a contact layer 5 are sequentially formed. The layer 2 can be flattened by using the substrate 10 having the same plane as the upper surface of the ridge 11 and the bottom of the groove 12, and the layers 3a, 3b formed thereon have no height difference. |
| 公开日期 | 1988-03-18 |
| 申请日期 | 1986-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75800]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTAKI KANAME. Semiconductor laser device. JP1988062291A. 1988-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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