Semiconductor device
文献类型：专利
| 作者 | HANDA YUICHI |
| 发表日期 | 1991-05-23 |
| 专利号 | JP1991120889A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To improve yield and reliability and to acquire a semiconductor device of a long life by forming a groove and an edge face structure by dryetching process and by forming a surface layer part thereof to a high resistance layer by irradiating it with proton. CONSTITUTION:An epitaxial film consisting of a first clad layer 2, an active layer 3, a second clad layer 4, and a cap layer 5 is formed successively on a substrate A ridge part is formed thereon to form a stripe structure to carry out transverse confinement not to form an electrode 7 in a position to be etched. Edge face processing is carried out as far as a lower part of the active layer 3 by FIB 1 Then, a surface layer part is formed to a high resistance layer 9 by irradiation with proton 12. |
| 公开日期 | 1991-05-23 |
| 申请日期 | 1989-10-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75804]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HANDA YUICHI. Semiconductor device. JP1991120889A. 1991-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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