Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SASAYA YUKIHIRO; NISHIWAKI YOSHIKAZU; MATSUOKA HARUJI; NISHIURA YOUZOU; OKAMOTO KENJI |
| 发表日期 | 1985-02-04 |
| 专利号 | JP1985022392A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To lessen the coupling loss with optical fibers in a distribution feedback type semiconductor laser by a method wherein the laser is made into a structure, wherein the divergence angle of beams is smaller and the outgoing beam mode is brought nearer to a circular one. CONSTITUTION:A layered formation; which consists of a P type contact layer 2, P type antimeltback layer 3, and active layer 4, an N type waveguide layer 5 and an N type substrate 6; is formed, and N type buried layers 8 and P type buried layers 9 are formed on both sides thereof. After these layers are formed, the top surface of the P type contact layer 2 is masked with a resist, etc., leaving the wedge-shaped open part intact, and an almost conical cavity is formed by performing an etching for forming the cavity by epitaxially growing a buried and enlarged waveguide path 10. Lastly, a P-side electrode 1 and an N-side electrode 7 are respectively formed on the top surface and the bottom surface. The front 11 of the buried and enlarged waveguide path 10 is an outgoing end. |
| 公开日期 | 1985-02-04 |
| 申请日期 | 1983-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75810]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | SASAYA YUKIHIRO,NISHIWAKI YOSHIKAZU,MATSUOKA HARUJI,et al. Semiconductor laser and manufacture thereof. JP1985022392A. 1985-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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