Semiconductor light-emitting device
文献类型：专利
| 作者 | FURUYA AKIRA; MAKIUCHI MASAO |
| 发表日期 | 1988-11-25 |
| 专利号 | JP1988288083A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain a device, in which electrodes are led out easily and which has excellent characteristics, by forming p-type and n-type conductive regions reaching a first clad layer from the surface of a semiconductor base body and oppositely facing through superlattice structure and the electrodes respectively brought into contact with the p-type and n-type conductive regions on the surface of the base body. CONSTITUTION:A high-resistance Al0.45Ga0.55As clad layer 1', superlattice structure 2, a high-resistance Al0.45Ga0.55As clad layer 1, and an n-type GaAs cap layer 4 are epitaxial-grown onto a semi-insulating GaAs substrate 10 in succession. In the superlattice structure 2, p-type layers 2Bp, in which beryllium (Be) is doped to Al0.3 Ga0.7As layers, and n-type layers 2Bn, in which silicon (Si) is doped to the Al0.3Ga0.7As layers, are shaped alternately as barrier layers, and non-doped GaAs active layers 2A are formed among both layers 2Bp and 2Bn. A p side electrode 9p is disposed onto the p-type conductive region 5p and an n side electrode 9n onto an n-type conductive region 5n. Holes are injected to an active layer 2A through the p-type barrier layer 2Bp from the p-type conductive region 5p and electrons through the n-type barrier layer 2Bn from the n-type conductive region 5n. Accordingly, constraint by the diffusion length of carriers is not conducted, and the range of selection of a distance between the p-type conductive region 5p and the n-type conductive region 5n is increased. |
| 公开日期 | 1988-11-25 |
| 申请日期 | 1987-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75818]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FURUYA AKIRA,MAKIUCHI MASAO. Semiconductor light-emitting device. JP1988288083A. 1988-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。