Manufacture of semiconductor laser element
文献类型：专利
| 作者 | ISHIZUMI TAKASHI |
| 发表日期 | 1992-04-21 |
| 专利号 | JP1992119680A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To enable an oxide formed on the surface of a clad layer inside a stripe-like groove to be removed without causing damage to the surface of the clad layer by a method wherein the oxide film formed on the surface of a substrate at chemical etching is irradiated with plasma in a reaction chamber. CONSTITUTION:An N-type Ga0.55Al0.45As clad layer 302, a P-type Ga0.86Al0.14As active layer 303, a P-type Ga0.55Al0.45As clad layer 304, and an N-type GaAs current constriction layer 305 are grown on an N-type GaAs substrate 301 through an MOCVD method. Then, a substrate 300 is etched with an etching solution so as to provide a groove 311 to the N-type GaAs current constriction layer 305. In succession, the substrate 300 on which a stripe-like groove 311 has been engraved is exposed to plasma to clean its surface. By this setup, the oxide film 310 can be removed without causing any damage to the surface 304a of the clad layer 304. Thereafter, a P-type Ga0.55Al0.45As clad layer 306 and a p-type GaAs contact layer 307 are made to grow. Last of all, an electrode is provided to both the sides of the substrate 300. |
| 公开日期 | 1992-04-21 |
| 申请日期 | 1990-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75820]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | ISHIZUMI TAKASHI. Manufacture of semiconductor laser element. JP1992119680A. 1992-04-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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