Semiconductor laser
文献类型：专利
| 作者 | SUGAO SHIGEO |
| 发表日期 | 1989-12-18 |
| 专利号 | JP1989312882A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To lessen a leakage current in a current blocking layer and make parasitic capacitance small and then, perform high speed operation at a low threshold value by providing insulator layers consisting of a fluoride containing at least an element out of elements: calcium, barium and strontium at both sides of an active region. CONSTITUTION:An active layer 12 is sandwiched vertically between a buffer layer 11 and a clad layer 13 and horizontally between insulator layers 20 and a current is bottlenecked by the insulator layers 20 which hold positions at both sides of the active layer 12. Then, electrons are injected into the active layer 12 through an n-type electrode 15 and the buffer layer 11 and on the other hand, positive holes are injected into the active layer 12 through a p-type electrode 16, a contact layer 14, and the clad layer 13. The insulator layers 20 are composed of a fluoride consisting of calcium, barium and strontium. This configuration lessens a leakage current in a current blocking layer and the resultant small parasitic capacitance makes it possible to perform high speed operation at a low threshold value. |
| 公开日期 | 1989-12-18 |
| 申请日期 | 1988-06-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75822]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO. Semiconductor laser. JP1989312882A. 1989-12-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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