Semiconductor laser device
文献类型：专利
| 作者 | OTA YOICHIRO |
| 发表日期 | 1991-06-20 |
| 专利号 | JP1991145783A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To relax stresses induced in several parts to a certain extent and to obtain a semiconductor laser of high reliability by a method wherein a hole is bored in a GaAs substrate, and metal which stays liquid within a range of temperature at which the semiconductor laser device operates is filled into the hole. CONSTITUTION:Electrons and holes injected through electrodes A2 and B6 are recombined in an active layer 5a to emit light. An epitaxial layers 5, a GaAs substrate 3, and a block 1 are different from each other in thermal expansion coefficient, stresses are induced in the several parts of them due to heat generated with the emission of light. On the other hand, the GaAs substrate 3 and the block 1 are joined together with adequate soldering material, but naturally stress occurs also at the joint concerned. At this point, as a hole is bored in the GaAs substrate 3 and liquid metal such as Hg is filled into the hole, the stresses concerned are relaxed. |
| 公开日期 | 1991-06-20 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75824]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTA YOICHIRO. Semiconductor laser device. JP1991145783A. 1991-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。