半導体レーザ
文献类型：专利
| 作者 | 五明 明子 |
| 发表日期 | 1999-04-16 |
| 专利号 | JP2913652B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To prevent deterioration of end faces due to light absorption and damage thereof and thereby to attain high reliability and high output by a method wherein {110} end faces in the opposite ends of an active layer formed on a (001) plane are formed of a layer buried in the same composition with the active layer by growth on a (111) plane. CONSTITUTION:An n-type (Al0.4Ga0.6)0.5In0.5P clad layer 2, a Ga0.5In0.5P active layer 3, a p-type (Al0.4Ga0.6)0.5In0.5P clad layer 4 and a P type GaAs cap layer 5 are made to grow sequentially on an n-type GaAs substrate 1 on a (001) plane. Next, a groove extending in the direction intersecting the direction of propagation of a laser light perpendicularly is formed so that a (111) plane appears from the surface. Thereafter a Ga0.5In0.5P layer 6 is made to grow selectively only on the (111) plane of the groove. Then, a p-type electrode 7 is formed on the GaAs contact layer 5 and an n-type electrode 8 on the back of the GaAs substrate End faces 9 are made by cleavage in a part wherein the Ga0.5In0.5P layer 6 is formed. Since deterioration of the end faces is reduced in a semiconductor laser thus obtained, reliability is improved, optical breakdown of the end faces is prevented and thereby a maximum light output can be improved. |
| 公开日期 | 1999-06-28 |
| 申请日期 | 1989-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75826]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 五明 明子. 半導体レーザ. JP2913652B2. 1999-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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