Semiconductor laser device
文献类型：专利
| 作者 | MURAKAMI TAKASHI; TANAKA TOSHIO; KUME ICHIROU |
| 发表日期 | 1985-07-12 |
| 专利号 | JP1985130882A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the generation of growing failures by growing a fundamental layer which is easy for crystal growth and subsequently a lower clad layer before growing the lower clad layer on a current narrowing layer in which a striped groove is formed. CONSTITUTION:On a current stricture layer 2 in which a groove 3 is formed, a lower clad layer fundamental layer 11 is grown, after which a lower clad layer 4 is formed on that layer 1 At this time, a mixed crystal ratio of Al of the lower clad layer fundamental layer 11 is made to be smaller than that of the lower clad layer 4. A thickness of the fundamental layer 11 is so determined that the groove 3 is not buried by the layer 11 completely. It is difficult to liquid-phase grow the layer of a large mixed crystal ratio of Al like the lower clad layer 4 directly on the current narrowing layer 2 without a defect, but growth of the lower clad layer fundamental layer 11 of reduced mixed crystal ratio of Al is easier as compared with the above case and a growing failure is hardly produced. As the lower clad layer 4 is grown continuously on that lower clad layer fundamental layer 11, there is almost no growing failure between the layers 11 and 4. |
| 公开日期 | 1985-07-12 |
| 申请日期 | 1983-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75828]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MURAKAMI TAKASHI,TANAKA TOSHIO,KUME ICHIROU. Semiconductor laser device. JP1985130882A. 1985-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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