Semiconductor laser device and its manufacture
文献类型：专利
| 作者 | GOMYO AKIKO |
| 发表日期 | 1989-07-27 |
| 专利号 | JP1989187892A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its manufacture |
| 英文摘要 | PURPOSE:To reduce a thermal resistance and improve characteristics and reliability by a method wherein a double-hetero structure wherein an active layer with a specific composition is provided between clad layers with specific compositions is provided on a semiconductor substrate and current blocking parts on both the sides of the stripe current injection part of the cladding layer on the side opposite to the substrate are composed of super lattice undoped crystals with a specific average composition. CONSTITUTION:An active layer 104 made of Ga0.5In0.5P or (AlyGa1-x)0.5In0.5P (0 |
| 公开日期 | 1989-07-27 |
| 申请日期 | 1988-01-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75830]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | GOMYO AKIKO. Semiconductor laser device and its manufacture. JP1989187892A. 1989-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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