半導体レーザの製造方法
文献类型：专利
| 作者 | 浜田 弘喜 |
| 发表日期 | 1997-06-20 |
| 专利号 | JP2664389B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To prevent the distortion of a crystal caused by a lattice mismatching by a method wherein a semiconductor laser is composed of an active layer and a clad layer which sandwich an optical guide layer between them, where the optical guide layer and the clad layer are formed of the same compositional material at growth temperatures different from each other. CONSTITUTION:Layers 42-47 are made to grow in such a manner that a raw material gas is selectively supplied from a gas introducing inlet 23 as a substrate 41 mounted on a susceptor 26 is heated by a work coil 25 and a heating lamp 29. First, the buffer layer 42 and the first clad layer 43 out of the layers 42-47 are successively grown as the substrate 41 is heated at a temperature of 780 deg.C, and then the optical guide layer 44 and the active layer 43 are successively grown after the growth temperature is made to fall to 680 deg.C. Then, the growth temperature is made to rise 780 deg.C and the second clad layer 46 and the cap layer 47 are made grow. When the growth temperature is set to 780 deg.C, the substrate 41 is heated by the work coil 25 and the heating lamp 29, and when the growth temperature is set to 680 deg.C, the substrate 41 is heated by only the work coil 25. |
| 公开日期 | 1997-10-15 |
| 申请日期 | 1988-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75835]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 浜田 弘喜. 半導体レーザの製造方法. JP2664389B2. 1997-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。