Semiconductor laser device
文献类型：专利
| 作者 | ONODERA NORIAKI |
| 发表日期 | 1987-07-14 |
| 专利号 | JP1987158382A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device, emission characteristics thereof are improved, power consumption thereof is reduced and which outputs beams in the direction vertical to the surface of a substrate, by demarcating a P-N junction with a section extending in at least the vertical direction into a semiconductor layer formed onto the substrate. CONSTITUTION:A multilayer reflecting film 11 and an N-type GaAs semiconductor layer 12 are laminated and shaped on an insulating GaAs substrate 10 in succession through an epitaxial growth method, and one part of the semiconductor layer 12 is etching-removed through an etching technique to form a stepped section. A Zn diffusion P region 13 and a Zn diffusion P region 14 are shaped through the thermal diffusion of Zn. Zn is diffused in the depth of an extent that a diffusion front from an etching base reaches the insulating GaAs substrate 10 at that time. Both sides in the vicinity of the side surface of the stepped section 12b vertical to the surface of the substrate 10 are removed through etching to form a projection 12a, and a P-type ohmic electrode 15 and an N-type ohmic electrode 16 are shaped at required positions. |
| 公开日期 | 1987-07-14 |
| 申请日期 | 1985-12-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | ONODERA NORIAKI. Semiconductor laser device. JP1987158382A. 1987-07-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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