Semiconductor laser and its manufacturing method
文献类型：专利
| 作者 | KAWADA SEIJI |
| 发表日期 | 1991-02-07 |
| 专利号 | JP1991029385A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacturing method |
| 英文摘要 | PURPOSE:To reduce non-aberration by making an execution refractive index difference in horizontal direction to be in two-stage steps. CONSTITUTION:A double hetero consisting of clad layers 2 and 4 with smaller refractive index than an active layer 3 sandwiching the active layer 3 is formed on a first conductive type substrate 1 and the second conductive type first clad layer 4 at the upper side of an active layer 3 has a mesa structure in stripe shape. Then, a second conductive type semiconductor layer 5 with a larger energy gap or a quantum level than the active layer 3 and a slower etching speed than the clad layer 4 and a second conductive type second clad layer 6 which is in narrower stripe shape than the upper part of the mesa structure and has a smaller refractive index than the active layer 3 are provided on this mesa structure and a semiconductor layer 8 whose energy gap is the same as or smaller than the active layer and which is of the first conductive type or in high resistance is provided at an area other than the upper part of the layer 6, thus reducing a non-aberration. |
| 公开日期 | 1991-02-07 |
| 申请日期 | 1989-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75841]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI. Semiconductor laser and its manufacturing method. JP1991029385A. 1991-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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