Semiconductor laser
文献类型：专利
| 作者 | OKAJIMA MASASUE; WATANABE YUKIO; NISHIKAWA YUKIE; SUZUKI MARIKO |
| 发表日期 | 1992-04-07 |
| 专利号 | JP1992105381A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive the improvement of the maximum light output in the continuous operation of a semiconductor laser by a method wherein a V-shaped groove or inverted V-shaped protrusion having an inclined plane slanted in the orientation to intersect orthogonally to the orientation is provided at a position, which corresponds to the edge face of a laser resonator, of a substrate and the band gap energy of an active layer in the vicinity of the edge face of the laser resonator is made larger than that of the main luminous part of the active layer. CONSTITUTION:A striped and V-shaped groove 21 is formed in a region, which corresponds to the vicinity of the edge face of a resonator, of an N-type GaAs substrate 10 having the face orientation slanted from the face (100) to the orientation and at the same time, the central part in the direction of the resonator is formed into a depth almost equal with that of the bottom of the V-shaped groove 2 Then, an N-type InGaAlP clad layer 11, an undoped InGaP active layer 12 and a P-type InGaAlP clad layer 14 are grown and formed in order. The band gap energy of the active layer is made small in the main luminous region of the active layer and the band gap energy of the active layer is made large in the edge face of the resonator. |
| 公开日期 | 1992-04-07 |
| 申请日期 | 1990-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75845]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | OKAJIMA MASASUE,WATANABE YUKIO,NISHIKAWA YUKIE,et al. Semiconductor laser. JP1992105381A. 1992-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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