Semiconductor laser device
文献类型：专利
| 作者 | KIMURA HIDE; TANAKA TOSHIO; TAKAMIYA SABURO; SAKAI TOSHIYA |
| 发表日期 | 1988-08-09 |
| 专利号 | JP1988192287A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce an operation current and suppress a nonpoint astigmation by a method wherein the conductivity types of the stripe-shape parts of an upper cladding layer and an active layer are converted into P-type and the parts whose conductivity types are not converted are used as a current blocking layer and a horizontal light guide layer. CONSTITUTION:N-type 1st cladding layer 2, an N-type or undoped active layer 3, 2nd cladding layer 4, a diffusion blocking layer 5 which has an inverse trapezoid stripe-shape trench 10 in which the 2nd cladding layer 4 is exposed and a P-type zinc supplying layer 6 which is formed on the exposed 2nd cladding layer 4, the side surfaces of the stripe-shape trench 10 and the diffusion blocking layer 5 and converts the conductivity types of the exposed part of the 2nd cladding layer 4 and the part of the active layer 3 under the exposed 2nd cladding layer 4 into P-type by Zn diffusion are formed on an N-type substrate 1 in this order. Therefore, the part of the 2nd cladding layer 4 whose conductivity type is not converted is used as a current blocking layer and the part of the active layer 3 whose conductivity type is not converted is used as a light guide layer against the part of the active layer 3 into which the P-type impurity is diffused and guides the light efficiently. With this constitution, an operation current can be reduced and a nonpoint astigmation can also be suppressed. |
| 公开日期 | 1988-08-09 |
| 申请日期 | 1987-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75866]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KIMURA HIDE,TANAKA TOSHIO,TAKAMIYA SABURO,et al. Semiconductor laser device. JP1988192287A. 1988-08-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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