Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | HOSHINA JUNICHI; OGURA MOTOTSUGU |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253677A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce heating by forming a structure including a second cladding layer as a mesa stripe structure on an active layer p-n junction region in the direction of a p-n junction, a p-type contact layer on a p-type active layer on the side surface of the second cladding layer, and an n-type contact layer on an n-type active layer. CONSTITUTION:A first conductivity type active layer region 3 and a second conductivity type active layer region 4 are formed, and a second cladding layer 5 having a mesa stripe structure in the direction of a p-n junction is formed on a p-n junction region 100 of the active layers 3, 4. A title device further includes a first conductivity type contact layer 6 comprising a material having a lower resistance than that of the second cladding layer 5 formed on the first conductivity type active layer 3, and a second conductivity type contact layer 7 having a lower resistance than that of the second cladding layer 5 and having a smaller refractive index than that of the same formed on the second conductivity type active layer 4. Accordingly, there is eliminated a need of reducing the resistance of the cladding layer 5, and the device can be made low resistance. Hereby, there is eliminated any heating which causes deterioration of the characteristics of the semiconductor light emitting device, and a long-life semiconductor light emitting device with good characteristics in yielded. |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSHINA JUNICHI,OGURA MOTOTSUGU. Semiconductor light emitting device and manufacture thereof. JP1990253677A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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