Semiconductor light-emitting device
文献类型：专利
| 作者 | HANAMITSU KIYOSHI; OOSAKA SHIGEO |
| 发表日期 | 1984-07-18 |
| 专利号 | JP1984124787A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To narrow a light-emitting region of an active layer, and to reduce oscillation threshold currents and noises by setting impurity concentration in first conduction type and second conduction type regions within a range of 9X10-5X10/cm and curvedly forming the second conduction type region in the active layer. CONSTITUTION:The first conduction type active layer 13 of impurity concentration of 9X10-5X10/cm, first conduction type first clad layer 12 and second clad layer 14, energy gaps thereof are larger than the active layer 13, and the second conduction type region 18' curvedly formed so as to be in contact with approximately the interface between the active layer 13 and the first clad layer 12 from the surface of the second clad layer 14 are provided, and impurity concentration in the second conduction type region 18' in the active layer 13 is brought to 9X10-5X10/cm. The stripe width of the active layer can be narrowed sufficiently because impurity concentration in a P type inversion region in the active layer 13 is brought to 9X10/cm and the region functions as the nose section of a semicircular diffusion layer. |
| 公开日期 | 1984-07-18 |
| 申请日期 | 1982-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75873]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | HANAMITSU KIYOSHI,OOSAKA SHIGEO. Semiconductor light-emitting device. JP1984124787A. 1984-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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