Manufacture of semiconductor laser
文献类型：专利
| 作者 | SHIBA TETSUO |
| 发表日期 | 1989-11-13 |
| 专利号 | JP1989281784A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate realization of an active layer composed of a narrow MQW(Multilayer Quantum Well) structure by a method wherein only the region of the MQW into which a second impurity is implanted is not disordered in an annealing process and the region is used as the active layer. CONSTITUTION:The width of an active layer composed of GaAs layers 3a and AlzGa1-zAs layers 3b is limited by an Si diffused region 7 formed by diffusion from the tip of a V-groove 11 and the sufficiently narrow active layer can be realized easily. If a forward bias is applied to this laser, a current is injected from a Zn diffused region 6 into the active layer in the Si diffused region 7 which is not disordered and has a low built-in potential from both the sides of it. The active layer has not only the function of confining a current and a light in the vertical direction but also has the function of a waveguide region in the horizontal direction because both the sides of the active layer are disordered and has lower refractive indices. Moreover, as the amplifying region of the light is also limited, the light can be confined efficiently, so that a stable laser oscillation can be realized. |
| 公开日期 | 1989-11-13 |
| 申请日期 | 1988-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75875]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SHIBA TETSUO. Manufacture of semiconductor laser. JP1989281784A. 1989-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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