Semiconductor laser device
文献类型：专利
| 作者 | ARIMOTO SATOSHI |
| 发表日期 | 1992-10-27 |
| 专利号 | JP1992303986A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To easily and highly accurately form the ridge of an AlGaAs ridge waveguide type laser device. CONSTITUTION:The upper clad layer of a ridge waveguide type semiconductor laser device is constituted in a two-layer structure of the first upper clad layer 4b of p-type AlGaAs and second upper clad layer 4c of p-type AlGaInP. Since these two materials can be completely removed by selective etching, the ridge section of this laser device can be formed only etching the layer 4c to a ridge- like shape by using the layer 4b as an etching stopper. |
| 公开日期 | 1992-10-27 |
| 申请日期 | 1991-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75881]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ARIMOTO SATOSHI. Semiconductor laser device. JP1992303986A. 1992-10-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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