Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | IMANAKA KOUICHI |
| 发表日期 | 1985-04-12 |
| 专利号 | JP1985063979A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To enable the easy construction of the titled element oscillating on a basic lateral mode at a low threshold value, on a semi-insulation substrate suitable for integration by a method wherein each layer of a semiconductor light emitting element is grown on the substrate by twice of discrete liquid phase epitaxis using a mask. CONSTITUTION:Part 1b of the upper side surface 1a of the semi-insulation substrate 1 made of InP is coated with a band-form mask in the direction of . The first clad layer 3 is grown on the part 1c of the surface 1a of the substrate 1 which is not covered with the mask 2. This clad layer 3 is made as an N-InP layer. When the N-InP is epitaxially grown in liquid phase on this surface 1a by the setting of the overcooling degree relatively small, the clad layer 3 having as oblique side surface 3a extending in the direction of crossing the substrate surface and a flat surface 3b is selectively grown. After the mask 2 is removed, the surface 3b of the first clad layer 3 is coated with a mask 4 similar to the mask 2. The active layer 5 and the second clad layer 6 are epitaxially grown in liquid phase successively on the surface 1b of the substrate The active layer 5 is made as a GaInAsP layer, and the second clad layer 6 as a P-InP layer. |
| 公开日期 | 1985-04-12 |
| 申请日期 | 1983-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI. Manufacture of semiconductor light emitting element. JP1985063979A. 1985-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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