Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | TAKAGI NOBUYUKI |
| 发表日期 | 1988-06-29 |
| 专利号 | JP1988156386A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To prevent the deterioration of a corrugated surface, to improve the feedback rate of a diffraction grating, to improve the stability of a single-axis mode and to decrease a threshold current value, by covering the corrugated surface on the surface of a first semiconductor with a second semiconductor layer, melting back the second semiconductor layer with a solution which is not saturated with the second substrate layer and excessively saturated with the first semiconductor, and growing a third semiconductor layer on the corrugated surface, to form the diffraction grating. CONSTITUTION:Photoresist is applied to an N-type InP (100) substrate 1, and a resist mask is formed by a two-beam interference method. Etching is performed with Br- methanol solution and the like to form corrugation 2C. On the InP substrate 1, e.g., In1-xGaxAsyP1-y (x=0.32, y=0.68) layer as a protecting layer 3 is grown by an MoOCVD method. the InGaAsP protecting layer 3 is melted back by an LPE method. The melt back of the InGaAsP protecting layer 3 is performed, and a non-doped InGaAsP guide layer 4, a non-doped InGaAsP active layer 5, a P-type InP clad layer 6 and a P-type InGaAsP contact layer 7 are sequentially grown. A p-side electrode 8 and an n-side electrode 9 are arranged on the semiconductor substration, and the wafer is divided into chips. |
| 公开日期 | 1988-06-29 |
| 申请日期 | 1986-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75900]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TAKAGI NOBUYUKI. Manufacture of semiconductor light emitting device. JP1988156386A. 1988-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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